Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Sanken electric |
SJPX-H3VR
|
244Kb / 5P |
SJPX-H3 has the characteristics of low VF and superior trr at high temperature. High efficiency is achieved by reducing the loss of circuit at high temperature.
|
SJPX-F2VR
|
242Kb / 5P |
SJPX-F2 has the characteristics of low VF and superior trr at high temperature. High efficiency is achieved by reducing the loss of circuit at high temperature.
|
SJPL-L4VR
|
226Kb / 5P |
SJPL-L4 realizes low leakage current at high temperature. High efficiency is achieved by reducing the loss of circuit at high temperature.
|
SJPB-L6VL
|
71Kb / 4P |
SJPB-H6 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal.
|
Silicon Laboratories |
SI7060
|
973Kb / 17P |
The Si7060 family of I2C temperature sensors measure and digitize the local temperature at the device. 4 modes of operation are possible:
Rev. 0.1 |
Bel Fuse Inc. |
ABC600-1012G
|
1Mb / 11P |
The high efficiency and high power density of the ABC family ensures
|
International Rectifier |
203CMQ
|
147Kb / 5P |
The 203CMQ high current Schottky rectifier module series has been optimized for low reverse leakage at high temperature.
|
STMicroelectronics |
UM1547
|
523Kb / 51P |
Using the firmware of the AT command set
|
International Rectifier |
203DMQ
|
119Kb / 5P |
The 203DMQ Schottky rectifier doubler module series has been optimized for low reverse leakage at high temperature.
|
203DNQ
|
74Kb / 5P |
The 203DNQ Schottky rectifier doubler module series has been optimized for low reverse leakage at high temperature.
|