2SC5508-T2B-A pdf, 2SC5508-T2B-A Descripción Electrónicos, 2SC5508-T2B-A Datasheet, 2SC5508-T2B-A view ::: ALLDATASHEET :::

No. de pieza	2SC5508-T2B-A

Descripción Electrónicos	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

Tamaño del archivo	229.94 Kbytes

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Fabricante Electrónico	RENESAS [Renesas Technology Corp]

Página de inicio	http://www.renesas.com

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Número de pieza similar - 2SC5508-T2B-A

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
NEC	2SC5508-T2	106Kb / 16P	NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Renesas Technology Corp	2SC5606	201Kb / 9P	NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
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	NESG2021M05	159Kb / 14P	NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
California Eastern Labs	NESG2046M33	292Kb / 4P	NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
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Renesas Technology Corp	2SC3355	248Kb / 10P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Renesas Technology Corp	2SC4093	175Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
California Eastern Labs	NE85634	216Kb / 6P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION